BUK7K29-100E
Dual N-channel 100 V, 24.5 mΩ standard level MOSFET
2 September 2015
Product data sheet
1. General description
Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package
using TrenchMOS technology. This product has been designed and qualified to AEC
Q101 standard for use in high performance automotive applications.
2. Features and benefits
Dual MOSFET
Q101 Compliant
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•
•
•
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Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C
3. Applications
12 V, 24 V and 48 V Automotive systems
Motors, lamps and solenoid control
Transmission control
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Ultra high performance power switching
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
100
29.5
68
Unit
V
VDS
ID
drain-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
VGS = 10 V; Tmb = 25 °C; Fig. 2
-
-
-
-
-
-
A
Ptot
total power dissipation Tmb = 25 °C; Fig. 1
W
Static characteristics FET1 and FET2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 10 A; Tj = 25 °C;
Fig. 11
-
-
19.5
13.1
24.5
mΩ
nC
Dynamic characteristics FET1 and FET2
QGD gate-drain charge
ID = 5 A; VDS = 80 V; VGS = 10 V;
Tj = 25 °C; Fig. 13; Fig. 14
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