Datasheet > BUK7L06-34ARC

BUK7L06-34ARC

更新时间： 2024-02-13 19:52:29

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恩智浦 - NXP		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
14页	296K
描述
TrenchPLUS standard level FET

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中文翻译

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数据手册

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BUK7L06-34ARC 数据手册

BUK7L06-34ARC

TrenchPLUS standard level FET

Rev. 03 — 3 December 2003

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect power transistor in a plastic package using

TrenchMOS™ technology, featuring very low on-state resistance, integral gate

resistor, ESD protection diodes and clamping diodes that are guaranteed to prevent

the MOSFET avalanching.

1.2 Features

■ ESD and overvoltage protection

■ Internal gate resistor

■ Q101 compliant

■ On-state resistance 5.1 mΩ (typ).

1.3 Applications

■ 12 V loads

■ Motors, lamps and solenoids.

1.4 Quick reference data

■ V_DSR(CL)= 41 V (typ)

■ I_D≤ 147 A

■ R_DSon= 5.1 mΩ (typ)

■ P_tot≤ 250 W.

2. Pinning information

Table 1:

Pinning - SOT78C, simpliﬁed outline and symbol

Pin Description

Simpliﬁed outline

Symbol

gate (g)

drain (d)

source (s)

mb mounting base,

connected to drain (d)

MBL521

2 3

MBL370

SOT78C (TO-220)

12 3 4 5 6 7...14

中文翻译

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