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BUK7M22-80E PDF预览

BUK7M22-80E

更新时间: 2024-11-25 11:13:55
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
13页 713K
描述
N-channel 80 V, 22 mΩ standard level MOSFET in LFPAK33Production

BUK7M22-80E 数据手册

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BUK7M22-80E  
N-channel 80 V, 22 mΩ standard level MOSFET in LFPAK33  
19 September 2016  
Product data sheet  
1. General description  
Standard level N-channel MOSFET in an LFPAK33 (Power33) package using  
TrenchMOS technology. This product has been designed and qualified to AEC Q101  
standard for use in high performance automotive applications.  
2. Features and benefits  
Q101 Compliant  
Repetitive avalanche rated  
Suitable for thermally demanding environments due to 175 °C rating  
True standard level gate with VGS(th) rating of greater than 1 V at 175 °C  
3. Applications  
12 V, 24 V and 48 V automotive systems  
Motors, lamps and solenoid control  
Transmission control  
Ultra high performance power switching  
4. Quick reference data  
Table 1.  
Symbol  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
80  
Unit  
V
VDS  
ID  
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C; Fig. 2  
-
-
-
-
-
-
37  
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
75  
W
Static characteristics  
RDSon drain-source on-state  
resistance  
Dynamic characteristics  
QGD gate-drain charge  
VGS = 10 V; ID = 10 A; Tj = 25 °C;  
Fig. 11  
-
-
18  
8
22  
-
mΩ  
nC  
ID = 10 A; VDS = 64 V; VGS = 10 V;  
Tj = 25 °C; Fig. 13; Fig. 14  
 
 
 
 

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