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BUK7511-55A PDF预览

BUK7511-55A

更新时间: 2024-11-24 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 302K
描述
TrenchMOS standard level FET

BUK7511-55A 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC, SC-46, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.18雪崩能效等级(Eas):211 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):75 A
最大漏极电流 (ID):75 A最大漏源导通电阻:0.011 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):166 W
最大脉冲漏极电流 (IDM):347 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK7511-55A 数据手册

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BUK7511-55A; BUK7611-55A  
TrenchMOS™ standard level FET  
Rev. 01 — 1 February 2001  
Product specification  
1. Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
TrenchMOS™ technology, featuring very low on-state resistance.  
Product availability:  
BUK7511-55A in SOT78 (TO-220AB)  
BUK7611-55A in SOT404 (D 2-PAK).  
2. Features  
TrenchMOS™ technology  
Q101 compliant  
175 °C rated  
Standard level compatible.  
3. Applications  
Automotive and general purpose power switching:  
12 V and 24 V loads  
c
c
Motors, lamps and solenoids.  
4. Pinning information  
Table 1: Pinning - SOT78, SOT404, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
mb  
mb  
2
drain (d)  
d
s
3
source (s)  
mb  
mounting base;  
connected to drain (d)  
g
MBB076  
2
1
3
MBK116  
MBK106  
1
2 3  
SOT78 (TO-220AB)  
SOT404 (D2-PAK)  

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