生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | ESD PROTECTION |
雪崩能效等级(Eas): | 125 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 57 A | 最大漏源导通电阻: | 0.018 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 228 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK7518-55127 | NXP |
获取价格 |
TRANSISTOR 57 A, 55 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purp | |
BUK751R8-40E | NXP |
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120A, 40V, 0.0018ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | |
BUK7520-100A | NXP |
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TrenchMOS standard level FET | |
BUK7520-55 | NXP |
获取价格 |
TrenchMOS transistor Standard level FET | |
BUK7520-55A | NXP |
获取价格 |
N-channel enhancement mode field-effect power transistor in a plastic package using Trench | |
BUK7520-55A | PHILIPS |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
BUK7520-55A,127 | NXP |
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N-channel TrenchMOS standard level FET TO-220 3-Pin | |
BUK7523-75A | NXP |
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TrenchMOS standard level FET | |
BUK7523-75A,127 | NXP |
获取价格 |
N-channel TrenchMOS standard level FET TO-220 3-Pin | |
BUK7524-55 | NXP |
获取价格 |
TrenchMOS transistor Standard level FET |