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BUK7526-100B PDF预览

BUK7526-100B

更新时间: 2024-11-24 22:17:15
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 275K
描述
TrenchMOS standard level FET

BUK7526-100B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC, SC-46, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.35雪崩能效等级(Eas):144 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):49 A
最大漏极电流 (ID):49 A最大漏源导通电阻:0.026 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):157 W
最大脉冲漏极电流 (IDM):197 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK7526-100B 数据手册

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BUK75/7626-100B  
TrenchMOS™ standard level FET  
Rev. 01 — 11 April 2003  
Product data  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
Philips High-Performance Automotive (HPA) TrenchMOS™ technology.  
Product availability:  
BUK7526-100B in SOT78 (TO-220AB)  
BUK7626-100B in SOT404 (D2-PAK).  
1.2 Features  
Very low on-state resistance  
175 °C rated  
Q101 compliant  
Standard level compatible.  
1.3 Applications  
Automotive systems  
12 V, 24 V and 42 V loads  
Motors, lamps and solenoids  
General purpose power switching.  
1.4 Quick reference data  
EDS(AL)S 144 mJ  
ID 49 A  
RDSon = 22 m(typ)  
Ptot 157 W.  
2. Pinning information  
Table 1:  
Pinning - SOT78 and SOT404 simplified outlines and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
mb  
[1]  
mb  
2
drain (d)  
d
3
source (s)  
mb  
mounting base,  
connected to  
drain (d)  
g
s
MBB076  
2
MBK106  
1
3
MBK116  
1
2 3  
SOT78 (TO-220AB)  
SOT404 (D2-PAK)  
[1] It is not possible to make connection to pin 2 of the SOT404 package.  

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