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BUK75150-55A PDF预览

BUK75150-55A

更新时间: 2024-11-24 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
15页 280K
描述
TrenchMOS standard level FET

BUK75150-55A 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC, SC-46, 3 PIN针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.23雪崩能效等级(Eas):16 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):11 A
最大漏极电流 (ID):11 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):36.6 W
最大脉冲漏极电流 (IDM):44 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK75150-55A 数据手册

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BUK75/76150-55A  
TrenchMOS™ standard level FET  
Rev. 02 — 25 November 2003  
Product data  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
Philips General-Purpose Automotive (GPA) TrenchMOS™ technology.  
1.2 Features  
Very low on-state resistance  
175 °C rated  
Q101 compliant  
Standard level compatible.  
1.3 Applications  
Automotive systems  
12 V and 24 V loads  
Motors, lamps and solenoids  
General purpose power switching.  
1.4 Quick reference data  
EDS(AL)S 16 mJ  
ID 11 A  
RDSon = 127 m(typ)  
Ptot 36 W.  
2. Pinning information  
Table 1:  
Pinning - SOT78 and SOT404 simplified outlines and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
mb  
d
s
mb  
[1]  
2
drain (d)  
3
source (s)  
g
mb  
mounting base,  
connected to  
drain (d)  
MBB076  
2
1
3
MBK116  
MBK106  
1
2 3  
SOT404 (D2-PAK)  
SOT78 (TO-220AB)  
[1] It is not possible to make connection to pin 2 of the SOT404 package.  

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