BUK438-800B

更新时间： 2024-09-30 22:15:15

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
7页	68K
描述
PowerMOS transistor

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中文翻译

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数据手册

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BUK438-800B 数据手册

Philips Semiconductors

Product specification

PowerMOS transistor

BUK438W-800A/B

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

field-effect power transistor in a

plastic envelope.

The device is intended for use in

Switched Mode Power Supplies

(SMPS), motor control, welding,

DC/DC and AC/DC converters, and

in general purpose switching

applications.

SYMBOL

PARAMETER

MAX.

UNIT

BUK438

-800A

800

7.6

220

1.5

-800B

800

6.6

220

2.0

V_DS

I_D

Drain-source voltage

Drain current (DC)

Total power dissipation

Drain-source on-state

resistance

Ω

P_tot

R_DS(ON)

PINNING - SOT429 (TO247)

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

tab drain

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

±V_GS

Drain-source voltage

800

Drain-gate voltage

R_GS= 20 kΩ

Gate-source voltage

-800A

7.6

-800B

I_D

Drain current (DC)

T_mb= 25 ˚C

T_mb= 100 ˚C

T_mb= 25 ˚C

6.6

4.1

I_D

Drain current (DC)

4.8

I_DM

Drain current (pulse peak value)

P_tot

T_stg

T_j

Total power dissipation

Storage temperature

Junction temperature

T_mb= 25 ˚C

- 55

220

150

˚C

THERMAL RESISTANCES

SYMBOL PARAMETER

CONDITIONS

MIN. TYP. MAX. UNIT

R_{th j-mb}

R_{th j-a}

Thermal resistance junction to

0.57

K/W

mounting base

Thermal resistance junction to

ambient

February 1998

Rev 1.000

12 3 4 5 6 7

中文翻译

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