生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | 风险等级: | 5.84 |
Is Samacsys: | N | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 800 V |
最大漏极电流 (ID): | 6.6 A | 最大漏源导通电阻: | 2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-247 |
JESD-30 代码: | R-PSFM-T3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 26 A |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK439-60A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | SOT-93 | |
BUK441-100A | ETC |
获取价格 |
N-Channel Enhancement MOSFET | |
BUK441-100B | NXP |
获取价格 |
TRANSISTOR 3 A, 100 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK441-60A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | SOT-186 | |
BUK441-60B | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 4.8A I(D) | SOT-186 | |
BUK442-100A | NXP |
获取价格 |
TRANSISTOR 6.6 A, 100 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK442-100B | NXP |
获取价格 |
TRANSISTOR 6.1 A, 100 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK442-50A | ETC |
获取价格 |
N-Channel Enhancement MOSFET | |
BUK442-50B | ETC |
获取价格 |
N-Channel Enhancement MOSFET | |
BUK442-60A | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 10A I(D) | SOT-186 |