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BUK438W-800B PDF预览

BUK438W-800B

更新时间: 2024-09-30 22:13:43
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
7页 68K
描述
PowerMOS transistor

BUK438W-800B 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
风险等级:5.92外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):6.6 A最大漏极电流 (ID):6.6 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-247JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):220 W最大脉冲漏极电流 (IDM):26 A
认证状态:Not Qualified子类别:FET General Purpose Powers
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUK438W-800B 数据手册

 浏览型号BUK438W-800B的Datasheet PDF文件第2页浏览型号BUK438W-800B的Datasheet PDF文件第3页浏览型号BUK438W-800B的Datasheet PDF文件第4页浏览型号BUK438W-800B的Datasheet PDF文件第5页浏览型号BUK438W-800B的Datasheet PDF文件第6页浏览型号BUK438W-800B的Datasheet PDF文件第7页 
Philips Semiconductors  
Product specification  
PowerMOS transistor  
BUK438W-800A/B  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
N-channel enhancement mode  
field-effect power transistor in a  
plastic envelope.  
The device is intended for use in  
Switched Mode Power Supplies  
(SMPS), motor control, welding,  
DC/DC and AC/DC converters, and  
in general purpose switching  
applications.  
SYMBOL  
PARAMETER  
MAX.  
MAX.  
UNIT  
BUK438  
-800A  
800  
7.6  
220  
1.5  
-800B  
800  
6.6  
220  
2.0  
VDS  
ID  
Drain-source voltage  
Drain current (DC)  
Total power dissipation  
Drain-source on-state  
resistance  
V
A
W
Ptot  
RDS(ON)  
PINNING - SOT429 (TO247)  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
d
gate  
2
drain  
g
3
source  
tab drain  
2
1
3
s
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VDS  
VDGR  
±VGS  
Drain-source voltage  
-
-
-
-
800  
800  
30  
V
V
V
Drain-gate voltage  
RGS = 20 kΩ  
Gate-source voltage  
-
-800A  
7.6  
-800B  
ID  
Drain current (DC)  
Tmb = 25 ˚C  
Tmb = 100 ˚C  
Tmb = 25 ˚C  
-
-
-
6.6  
4.1  
26  
A
A
A
ID  
Drain current (DC)  
4.8  
IDM  
Drain current (pulse peak value)  
30  
Ptot  
Tstg  
Tj  
Total power dissipation  
Storage temperature  
Junction temperature  
Tmb = 25 ˚C  
-
-
-
- 55  
-
220  
150  
150  
W
˚C  
˚C  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-mb  
Rth j-a  
Thermal resistance junction to  
-
-
-
0.57  
-
K/W  
K/W  
mounting base  
Thermal resistance junction to  
ambient  
45  
February 1998  
1
Rev 1.000  

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