生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.83 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 33 A | 最大漏源导通电阻: | 0.057 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK436-100B | ETC |
获取价格 |
N-Channel Enhancement MOSFET | |
BUK436-100B/B | ETC |
获取价格 |
TRANSISTOR MOSFET TO 247 | |
BUK436-200A | NXP |
获取价格 |
PowerMOS transistor | |
BUK436-200A/B | ETC |
获取价格 |
TRANSISTOR MOSFET TO 247 | |
BUK436-200B | NXP |
获取价格 |
PowerMOS transistor | |
BUK436-50A | ETC |
获取价格 |
N-Channel Enhancement MOSFET | |
BUK436-50B | ETC |
获取价格 |
N-Channel Enhancement MOSFET | |
BUK436-60A | NXP |
获取价格 |
TRANSISTOR 50 A, 60 V, 0.028 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK436-60B | NXP |
获取价格 |
TRANSISTOR 46 A, 60 V, 0.033 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK436-800A | NXP |
获取价格 |
PowerMOS transistor |