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BU9847GUL-W_10 PDF预览

BU9847GUL-W_10

更新时间: 2024-09-17 09:02:19
品牌 Logo 应用领域
罗姆 - ROHM 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
19页 394K
描述
WL-CSP EEPROM family I2C BUS

BU9847GUL-W_10 数据手册

 浏览型号BU9847GUL-W_10的Datasheet PDF文件第2页浏览型号BU9847GUL-W_10的Datasheet PDF文件第3页浏览型号BU9847GUL-W_10的Datasheet PDF文件第4页浏览型号BU9847GUL-W_10的Datasheet PDF文件第5页浏览型号BU9847GUL-W_10的Datasheet PDF文件第6页浏览型号BU9847GUL-W_10的Datasheet PDF文件第7页 
High Reliability Series Serial EEPROMs  
WL-CSP EEPROM family  
I2C BUS  
No.10001EAT14  
BU9847GUL-W  
Description  
BU9847GUL-W series is a serial EEPROM of I2C BUS interface method. 1.7V single power source action and actions  
available at 400kHz.  
Features  
1) Completely conforming to the world standard I2C BUS. All controls available by 2 ports of serial clock (SCL)  
and serial data(SDA)  
2) Other devices than EEPROM can be connected to the same port, saving microcontroller port.  
3) Actions available at 400kHz clock (1.7V5.5V)  
4) 1.75.5V single power source action most suitable for battery use.  
5) Page write mode useful for initial value write at factory shipment.  
6) Auto erase and auto end function at data rewrite.  
7) Low current consumption  
At write action (5V)  
At read action (5V)  
: 1.2mA (Typ.)  
: 0.2mA (Typ.)  
At standby action (5V) : 0.1μA (Typ.)  
8) Write mistake prevention function  
Write (write protect) function added.  
Write mistake prevention function at low voltage.  
9) Data rewrite up to 1,000,000times.  
10) Data kept for 40 years.  
Page write  
Number of pages  
16Byte  
Product number  
BU9847GUL-W  
11) Noise filter built in SCL / SDA terminal  
12) Shipment data all address FFh.  
BU9847GUL-W  
Capacity  
4Kbit  
Bit format  
512×8  
Type  
Power source voltage  
1.7~5.5V  
VCSP50L1  
BU9847GUL-W  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Symbol  
Vcc  
Pd  
Ratings  
-0.3~+6.5  
220 *1  
Unit  
V
Impressed voltage  
Permissible dissipation  
Storage temperature range  
Operating temperature range  
Terminal voltage  
mW  
Tstg  
Topr  
-
-65~125  
-40~85  
-0.3~Vcc+1.0  
V
*
When using at Ta=25or higher, 2.2mW (*1) to be reduced per 1℃  
Recommended action conditions  
Parameter  
Symbol  
Vcc  
Ratings  
1.7~5.5  
0~Vcc  
Unit  
V
Power source voltage  
Input voltage  
Vin  
Memory cell characteristics (Ta=25°C, Vcc=1.7~5.5V)  
Limits  
Parameter  
Min  
Unit  
Typ.  
Max  
Number of data rewrite times *1  
1,000,000  
40  
-
-
-
-
Times  
Years  
Data hold years  
*1 Not 100% TESTED  
www.rohm.com  
© 2010 ROHM Co., Ltd. All rights reserved.  
2010.09 - Rev.A  
1/18  

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