Datasheet > BU9882-E2

BU9882-E2

更新时间： 2022-12-01 22:30:05

品牌	Logo	应用领域
罗姆 - ROHM		可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管
页数	文件大小	规格书
17页	812K
描述
EEPROM, PDIP14, DIP-14

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数据手册

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BU9882-E2 数据手册

TECHNICAL NOTE

Double-cell Memory for Plug & Play

EDID Memory

BR24C21/F/FJ/FV, BU9882/F/FV-W

BR24C21/F/FJ/FV

●Description

The BR24C21 series ICs are serial EEPROMs that support DDC1^TM/DDC2^TMinterfaces for Plug and Play displays.

●Features

1) Compatible with both DDC1^TM/DDC2^TM

2) Operating voltage range: 2.5V to 5.5V

3) Page write function: 8bytes

4) Low power consumption

Active (at 5V)

: 1.5mA (typ)

Stand-by (at 5V) : 0.1μA (typ)

5) Address auto increment function during Read operation

6) Data security

Write enable feature (VCLK)

Write protection at low Vcc

7) Various packages available: DIP-T8 / SOP8 / SOP-J8 / SSOP-B8

8) Initial data=FFh

9) Data retention: 10years

10) Rewriting possible up to 100,000 times

●Absolute maximum ratings (Ta=25℃)

●Recommended operating conditions

Parameter

Symbol

VCC

Rating

-0.3～+6.5

Unit

Parameter

Supply Voltage

Input Voltage

Symbol

VCC

Rating

2.5～5.5

0～VCC

Unit

Supply Voltage

800 (DIP-T8)

450 (SOP8)

450 (SOP-J8)

VIN

Power Dissipation

350 (SSOP-B8) *4

Storage

Temperature

Operating

Temperature

Terminal Voltage

Tstg

-65～+125

℃

●Memory cell characteristics

Topr

-40～+85

℃

Limits

Typ. Max.

Parameter

Min.

Unit

-0.3～VCC+0.3

Write/Erase Cycle

Data Retention

100,000

Cycle

Year

* Reduce by 8.0 mW/°C over 25°C (*1), 4.5mW/℃ (*2,3), and 3.5mW/℃ (*4)

Ver.B Oct.2005

12 3 4 5 6 7...17

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型号	品牌	描述	获取价格	数据表
BU9882F-E2	ROHM	EEPROM, PDSO14, SOP-14	获取价格
BU9882FV-W	ROHM	DDC2 DISPLAY ID ROM	获取价格
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BU9882FV-WE2	ROHM	EDID Memory (For display)	获取价格
BU9882F-W	ROHM	DDC2 DISPLAY ID ROM	获取价格
BU9882F-WE1	ROHM	EEPROM Card, 256X8, Serial, CMOS, PDSO14	获取价格