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BU9889GUL-W PDF预览

BU9889GUL-W

更新时间: 2024-02-05 01:46:17
品牌 Logo 应用领域
罗姆 - ROHM 存储内存集成电路可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟
页数 文件大小 规格书
18页 405K
描述
WL-CSP EEPROM family I2C BUS

BU9889GUL-W 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:BGA
包装说明:ROHS COMPLIANT, WLCSP-6针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.32.00.51风险等级:5.61
最大时钟频率 (fCLK):0.4 MHzJESD-30 代码:R-PBGA-B6
JESD-609代码:e1长度:1.6 mm
内存密度:8192 bit内存集成电路类型:EEPROM
内存宽度:8功能数量:1
端子数量:6字数:1024 words
字数代码:1000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:1KX8封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH并行/串行:SERIAL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:0.55 mm串行总线类型:I2C
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:1 mm
最长写入周期时间 (tWC):5 msBase Number Matches:1

BU9889GUL-W 数据手册

 浏览型号BU9889GUL-W的Datasheet PDF文件第2页浏览型号BU9889GUL-W的Datasheet PDF文件第3页浏览型号BU9889GUL-W的Datasheet PDF文件第4页浏览型号BU9889GUL-W的Datasheet PDF文件第5页浏览型号BU9889GUL-W的Datasheet PDF文件第6页浏览型号BU9889GUL-W的Datasheet PDF文件第7页 
High Reliability Series Serial EEPROM Series  
WL-CSP EEPROM family  
I2C BUS  
BU9889GUL-W  
No.10001EAT07  
Description  
BU9889GUL-W is a serial EEPROM of I2C BUS interface method.  
Features  
1) Completely conforming to the world standard I2C BUS.  
All controls available by 2 ports of serial clock (SCL) and serial data (SDA)  
2) 1k words×8 bits architecture 8kbit serial EEPROM.  
3) Other devices than EEPROM can be connected to the same port, saving microcontroller port.  
4) 1.75.5V single power source action most suitable for battery use.  
5) FAST MODE 400kHz at 1.75.5V  
6) Page write mode useful for initial value write at factory shipment.  
7) Auto erase and auto end function at data rewrite.  
8) Low current consumption  
At write operation (5V)  
At read operation (5V)  
: 0.5mA (Typ.)  
: 0.2mA (Typ.)  
At standby operation (5V) : 0.1µA (Typ.)  
9) Write mistake prevention function  
Write (write protect) function added  
Write mistake prevention function at low voltage  
10) WLCSP6pin compact package  
11) Data rewrite up to 100,000 times  
12) Data kept for 40 years  
13) Noise filter built in SCL / SDA terminal  
14) Shipment data all address FFh  
Absolute maximum ratings (Ta=25)  
Parameter  
Impressed voltage  
symbol  
VCC  
Pd  
Limits  
-0.3+6.5  
220*1  
Unit  
V
Permissible dissipation  
Storage temperature range  
Action temperature range  
Terminal voltage  
mW  
Tstg  
Topr  
-
-65+125  
-40+85  
-0.3Vcc+1.0  
V
*1 When using at Ta=25or higher, 2.2mW to be reduced per 1℃  
Memory cell characteristics (Ta=25, Vcc=1.75.5V)  
Limits  
Parameter  
Unit  
Min.  
100,000  
40  
Typ.  
Max.  
Number of data rewrite times *1  
-
-
-
-
Times  
Years  
Data hold years *1  
*1 Not 100% TESTED  
Recommended operating conditions  
Parameter  
Symbol  
Vcc  
Limits  
Unit  
V
Power source voltage  
Input voltage  
1.75.5  
0Vcc  
VIN  
www.rohm.com  
2010.01 - Rev.A  
1/17  
© 2010 ROHM Co., Ltd. All rights reserved.  

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