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BU406TU PDF预览

BU406TU

更新时间: 2024-11-04 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关晶体管功率双极晶体管
页数 文件大小 规格书
3页 117K
描述
NPN 双极功率晶体管

BU406TU 技术参数

是否无铅: 不含铅生命周期:End Of Life
包装说明:TO-220, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.35Is Samacsys:N
最大集电极电流 (IC):7 A集电极-发射极最大电压:200 V
配置:SINGLE最小直流电流增益 (hFE):10
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):60 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

BU406TU 数据手册

 浏览型号BU406TU的Datasheet PDF文件第2页浏览型号BU406TU的Datasheet PDF文件第3页 
BU406, BU407  
NPN Power Transistors  
These devices are high voltage, high speed transistors for horizontal  
deflection output stages of TV’s and CRT’s.  
Features  
High Voltage: V  
= 330 or 400 V  
CEV  
http://onsemi.com  
Fast Switching Speed: t = 750 ns (max)  
f
Low Saturation Voltage: V  
PbFree Packages are Available*  
= 1 V (max) @ 5 A  
CE(sat)  
NPN SILICON  
POWER TRANSISTORS  
7 AMPERES 60 WATTS  
150 AND 200 VOLTS  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
CollectorEmitter Voltage  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
BU406  
V
200  
150  
Vdc  
CEO  
BU407  
BU406  
BU407  
V
400  
330  
Vdc  
Vdc  
CEV  
CBO  
EBO  
TO220AB  
CASE 221A09  
STYLE 1  
BU406  
BU407  
V
V
400  
330  
6
Vdc  
Adc  
Collector Current Continuous  
Peak Repetitive  
I
C
7
10  
15  
1
2
3
Peak (10 ms)  
Base Current  
I
4
Adc  
B
MARKING DIAGRAM  
Total Device Dissipation @ T = 25_C  
P
60  
0.48  
W
W/_C  
C
D
Derate above 25°C  
Operating and Storage Junction  
Temperature Storage  
T , T  
65 to 150  
_C  
J
stg  
BU40xG  
AY WW  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max  
2.08  
70  
Unit  
_C/W  
_C/W  
_C  
Thermal Resistance, JunctiontoCase  
Thermal Resistance, JunctiontoAmbient  
R
q
JC  
R
q
JA  
Maximum Lead Temperature for Soldering  
Purposes1/8from Case for 5 Seconds  
T
L
260  
BU40x = Specific Device Code  
x = 6 or 7  
A
Y
WW  
G
= Assembly Location  
= Year  
= Work Week  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
= PbFree Package  
ORDERING INFORMATION  
Device  
BU406  
Package  
Shipping  
TO220AB  
50 Units / Rail  
50 Units / Rail  
BU406G  
TO220AB  
(PbFree)  
BU407  
TO220AB  
50 Units / Rail  
50 Units / Rail  
BU407G  
TO220AB  
(PbFree)  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
May, 2009 Rev. 8  
BU406/D  

BU406TU 替代型号

型号 品牌 替代类型 描述 数据表
BU406G ONSEMI

类似代替

NPN Power Transistors
BU406 ONSEMI

类似代替

NPN SILICON POWER TRANSISTORS
BU406 MOTOROLA

功能相似

7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS

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