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BU407

更新时间: 2024-11-02 22:48:35
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7页 161K
描述
NPN SILICON POWER TRANSISTORS

BU407 数据手册

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BU406, BU407  
NPN SILICON POWER TRANSISTORS  
Copyright © 1997, Power Innovations Limited, UK  
AUGUST 1978 - REVISED MARCH 1997  
7 A Continuous Collector Current  
15 A Peak Collector Current  
TO-220 PACKAGE  
(TOP VIEW)  
60 W at 25°C Case Temperature  
1
2
3
B
C
E
Pin 2 is in electrical contact with the mounting base.  
MDTRACA  
absolute maximum ratings at 25°C case temperature (unless otherwise noted)  
RATING  
SYMBOL  
VALUE  
UNIT  
BU406  
BU407  
BU406  
BU407  
BU406  
BU407  
400  
Collector-base voltage (IE = 0)  
Collector-emitter voltage (VBE = -2 V)  
Collector-emitter voltage (IB = 0)  
VCBO  
V
330  
400  
VCEX  
VCEO  
V
V
330  
200  
150  
Emitter-base voltage  
VEB  
IC  
6
V
A
Continuous collector current  
Peak collector current (see Note 1)  
Continuous base current  
7
ICM  
IB  
15  
4
A
A
Continuous device dissipation at (or below) 25°C case temperature  
Operating junction temperature range  
Ptot  
Tj  
60  
W
°C  
°C  
-55 to +150  
-55 to +150  
Storage temperature range  
Tstg  
NOTE 1: This value applies for tp £ 10 ms, duty cycle £ 2%.  
P R O D U C T  
I N F O R M A T I O N  
Information is current as of publication date. Products conform to specifications in accordance  
with the terms of Power Innovations standard warranty. Production processing does not  
necessarily include testing of all parameters.  
1

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