Datasheet > BU407

BU407

更新时间： 2024-11-19 22:48:35

品牌	Logo	应用领域
POINN		晶体晶体管开关局域网
页数	文件大小	规格书
7页	161K
描述
NPN SILICON POWER TRANSISTORS

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数据手册

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BU407 数据手册

BU406, BU407

NPN SILICON POWER TRANSISTORS

AUGUST 1978 - REVISED MARCH 1997

●

7 A Continuous Collector Current

15 A Peak Collector Current

TO-220 PACKAGE

(TOP VIEW)

60 W at 25°C Case Temperature

Pin 2 is in electrical contact with the mounting base.

MDTRACA

absolute maximum ratings at 25°C case temperature (unless otherwise noted)

RATING

SYMBOL

VALUE

UNIT

BU406

BU407

BU406

BU407

BU406

BU407

400

Collector-base voltage (I_E= 0)

Collector-emitter voltage (V_BE= -2 V)

Collector-emitter voltage (I_B= 0)

V_CBO

330

400

V_CEX

V_CEO

330

200

150

Emitter-base voltage

V_EB

I_C

Continuous collector current

Peak collector current (see Note 1)

Continuous base current

I_CM

I_B

Continuous device dissipation at (or below) 25°C case temperature

Operating junction temperature range

P_tot

T_j

°C

-55 to +150

Storage temperature range

T_stg

NOTE 1: This value applies for t_p£ 10 ms, duty cycle £ 2%.

P R O D U C T

I N F O R M A T I O N

Information is current as of publication date. Products conform to specifications in accordance

with the terms of Power Innovations standard warranty. Production processing does not

necessarily include testing of all parameters.

12 3 4 5 6 7

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