是否无铅: | 不含铅 | 生命周期: | Active |
零件包装代码: | TO-220AB | 包装说明: | ROHS COMPLIANT, CASE 221A-09, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 0.53 |
其他特性: | LEADFORM OPTIONS ARE AVAILABLE | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 7 A | 集电极-发射极最大电压: | 200 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 10 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 60 W |
认证状态: | Not Qualified | 子类别: | Other Transistors |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 10 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BU406TU | ONSEMI |
类似代替 |
NPN 双极功率晶体管 | |
BU407 | ONSEMI |
类似代替 |
NPN SILICON POWER TRANSISTORS | |
BU406 | ONSEMI |
类似代替 |
NPN SILICON POWER TRANSISTORS |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BU406G-A-T3P-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-A-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-A-TF1-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-A-TF3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-A-TQ2-R | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-A-TQ2-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-B-T3P-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-B-TA3-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-B-TF1-T | UTC |
获取价格 |
Power Bipolar Transistor | |
BU406G-B-TF3-T | UTC |
获取价格 |
Power Bipolar Transistor |