Datasheet > BU407

BU407

更新时间： 2024-11-17 22:48:35

品牌	Logo	应用领域
永盛 - Wing Shing		晶体晶体管开关局域网
页数	文件大小	规格书
1页	68K
描述
SILICON EPITAXIAL PLANNAR TRANSISTOR(GENERAL DESCRIPTION)

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BU407 数据手册

BU407

SILICON EPITAXIAL PLANNAR TRANSISTOR

GENERAL DESCRIPTION

High frequency, high power transistors in a plastic

envelope, primarily for use in audio and general

purpose

TO-220

QUICK REFERENCE DATA

SYMBOL

V_CESM

V_CEO

I_C

PARAMETER

CONDITIONS

MIN

MAX

330

150

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Collector current (DC)

V_BE= 0V

Collector current peak value

Total power dissipation

Collector-emitter saturation voltage

Diode forward voltage

I_CM

P_tot

V_CEsat

V_F

T_mb25

I_C= 5.0A; I_B= 0.5A

1.0

Fall time

I_C=5A,-I_B(end)=0.5A,V_CC=60V

0.75

t_f

LIMITING VALUES

SYMBOL

V_CESM

V_CEO

V_EBO

I_C

PARAMETER

CONDITIONS

MIN

MAX

330

150

UNIT

Collector-emitter voltage peak value

Collector-emitter voltage (open base)

Emitter-base oltage (open colloctor)

Collector current (DC)

V_BE= 0V

Base current (DC)

I_B

P_tot

Total power dissipation

Tmb 25

Storage temperature

-55

150

T_stg

T_j

Junction temperature

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

5.0

UNIT

Collector-base cut-off current

Emitter-base cut-off current

Collector-emitter breakdown voltage

Collector-emitter saturation voltages

DC current gain

V_CB=400V

I_CBO

I_EBO

V_(BR)CEO

V_CEsat

h_FE

f_T

C_c

t_on

t_s

t_f

V_EB=5V

1.0

I_C=10mA

150

I_C= 5.0A; I_B= 0.5A

I_C= 2.0A; V_CE= 5V

I_C= 0.5A; V_CE= 10V

V_CB= 10V

1.0

Transition frequency at f = 5MHz

Collector capacitance at f = 1MHz

On times

MHz

I_C=5A,-I_B(end)=0.5A,V_CC=60V

Tum-off storage time

Fall time

0.75

Wing Shing Computer Components Co., (H.K.)Ltd.

Homepage: http://www.wingshing.com

Tel:(852)2341 9276 Fax:(852)2797 8153

E-mail: wsccltd@hkstar.com

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