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BU407 PDF预览

BU407

更新时间: 2024-11-03 06:44:35
品牌 Logo 应用领域
无锡固电 - ISC 晶体晶体管开关局域网
页数 文件大小 规格书
2页 107K
描述
isc Silicon NPN Power Transistor

BU407 数据手册

 浏览型号BU407的Datasheet PDF文件第2页 
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistor  
BU407  
DESCRIPTION  
·High Voltage: VCEV= 330V(Min)  
·Fast Switching Speed-  
: tf= 750ns(Max)  
·Low Saturation Voltage-  
: VCE(sat)= 1.0V(Max)@ IC= 5A  
APPLICATIONS  
·Designed for use in horizontal deflection output stages  
of TV’s and CRT’s  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VCBO  
VCEV  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VALUE  
330  
330  
150  
6
UNIT  
V
V
V
V
Collector Current-Continuous  
Collector Current-Peak Repetitive  
Collector Current- Peak (10ms)  
Base Current  
7
A
ICP  
10  
A
ICP  
15  
A
IB  
4
A
Collector Power Dissipation  
@ TC=25℃  
PC  
60  
W
TJ  
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
2.08  
70  
/W  
/W  
Rth j-c  
Rth j-a  
isc Websitewww.iscsemi.cn  

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