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BU406TU

更新时间: 2024-11-03 12:26:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率双极晶体管开关局域网
页数 文件大小 规格书
4页 135K
描述
NPN Epitaxial Silicon Transistor

BU406TU 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.04
Is Samacsys:N最大集电极电流 (IC):7 A
集电极-发射极最大电压:200 V配置:SINGLE
最小直流电流增益 (hFE):10JEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):60 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):10 MHzBase Number Matches:1

BU406TU 数据手册

 浏览型号BU406TU的Datasheet PDF文件第2页浏览型号BU406TU的Datasheet PDF文件第3页浏览型号BU406TU的Datasheet PDF文件第4页 
April 2012  
BU406/406H/408  
NPN Epitaxial Silicon Transistor  
Features  
• High Voltage Switching  
• Use In Horizontal Deflection Output Stage  
TO-220  
1
1.Base 2.Collector 3.Emitter  
Absolute Maximum Ratings TC = 25°C unless otherwise noted  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Parameter  
Value  
400  
Units  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
200  
V
6
V
7
A
ICP  
10  
A
IB  
4
60  
A
PC  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
W
°C  
°C  
TJ  
150  
TSTG  
- 55 to 150  
Electrical Characteristics TC = 25°C unless otherwise noted  
Symbol  
Parameter  
Collector Cut-off Current  
Test Condition  
VCE = 400V, VBE = 0  
VCE = 250V, VBE = 0  
Min.  
Max. Units  
ICES  
5
100  
1
mA  
μA  
mA  
VCE = 250V, VBE = 0 @ TC=150°C  
IEBO  
Emitter Cut-off Current  
VBE = 6V, IC = 0  
1
mA  
VCE(sat)  
Collector-Emitter Saturation Voltage  
: BU406  
: BU406H  
: BU408  
IC = 5A, IB = 0.5A  
IC = 5A, IB = 0.8A  
IC = 6A, IB = 1.2A  
1
1
1
V
V
V
VBE(sat)  
Base-Emitter Saturation Voltage  
: BU406  
: BU406H  
: BU408  
IC = 5A, IB = 0.5A  
IC = 5A, IB = 0.5A  
IC = 6A, IB = 1.2A  
1.2  
1.2  
1.5  
V
V
V
fT  
Current Gain Bandwidth Product  
VCE = 10V, IC = 0.5A  
10  
MHz  
tOFF  
Turn Off Time  
: BU406  
IC = 5A, IB = 0.5A  
IC = 5A, IB = 0.8A  
IC = 6A, IB = 1.2A  
0.75  
0.4  
0.4  
μs  
μs  
μs  
: BU406H  
: BU408  
© 2012 Fairchild Semiconductor Corporation  
BU406/406H/408 Rev. B0  
www.fairchildsemi.com  
1

BU406TU 替代型号

型号 品牌 替代类型 描述 数据表
BU406 FAIRCHILD

类似代替

High Voltage Switching
BU406G ONSEMI

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