BU406

更新时间： 2024-11-02 22:48:35

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关高压
页数	文件大小	规格书
5页	50K
描述
High Voltage Switching

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数据手册
替代型号

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BU406 数据手册

BU406/406H/408

High Voltage Switching

•

Use In Horizontal Deflection Output Stage

TO-220

1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Base Current

400

CBO

CEO

EBO

200

Collector Dissipation

Junction Temperature

Storage Temperature

°C

150

- 55 ~ 150

STG

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Max.

Units

Collector Cut-off Current

= 400V, V = 0

100

µA

CES

= 250V, V = 0

= 250V, V = 0 @ T =150°C

Emitter Cut-off Current

= 6V, I = 0

EBO

(sat)

Collector-Emitter Saturation Voltage

: BU406

: BU406H

: BU408

= 5A, I = 0.5A

= 5A, I = 0.8A

= 6A, I = 1.2A

(sat)

Base-Emitter Saturation Voltage

: BU406

: BU406H

: BU408

= 5A, I = 0.5A

1.2

1.5

= 5A, I = 0.5A

= 6A, I = 1.2A

Current Gain Bandwidth Product

= 10V, I = 0.5A

MHz

Turn OFF Time

: BU406

OFF

= 5A, I = 0.5A

0.75

0.4

µs

: BU406H

: BU408

= 5A, I = 0.8A

= 6A, I = 1.2A

Rev. A, February 2000

12 3 4 5

中文翻译

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BU406 替代型号

型号	品牌	替代类型	描述	数据表
BU406TU	FAIRCHILD	类似代替	NPN Epitaxial Silicon Transistor
BU406G	ONSEMI	功能相似	NPN Power Transistors
BU406	ONSEMI	功能相似	NPN SILICON POWER TRANSISTORS

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BU406_03	STMICROELECTRONICS	获取价格	SILICON NPN SWITCHING TRANSISTOR
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BU40616A	MOTOROLA	获取价格	7A, 200V, NPN, Si, POWER TRANSISTOR, TO-220AB
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