Datasheet > BTA410Y-800ET

BTA410Y-800ET

更新时间： 2024-11-15 17:01:07

品牌	Logo	应用领域
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页数	文件大小	规格书
13页	495K
描述
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulate

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BTA410Y-800ET 数据手册

BTA410Y-800ET

3Q Hi-Com Triac

Rev.02 - 30 May 2023

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a IITO220 internally insulated plastic

package. This "series ET" triac balances the requirements of commutation performance and gate

sensitivity and is intended for interfacing with low power drivers including microcontrollers. It is used

in applications where "high junction operating temperature" capability is required.

2. Features and beneﬁts

•

3Q technology for improved noise immunity

•

Direct interfacing with low power drivers and microcontrollers

Good immunity to false turn-on by dV/dt

High commutation capability with sensitive gate

High T_j(max)

Isolated mounting base with 2500 V (RMS) isolation

Planar passivated for voltage ruggedness and reliability

Sensitive gate for easy logic level triggering

Triggering in three quadrants only

3. Applications

•

Electronic thermostats (heating and cooling)

Motor Controls

Rectiﬁer-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Absolute maximum rating

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

800

RMS on-state current

full sine wave; T_mb≤ 120 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on- full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

100

state current

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

110

150

Max

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

0.5

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...13

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