BTA412Y-800B
3Q Triac
Rev.02 - 30 July 2021
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in an IITO220 internally insulated plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series B" triac will commutate the full RMS current at the maximum rated junction temperature
without the aid of a snubber. This device has high Tj operating capability and an internally isolated
mounting base.
2. Features and benefits
•
3Q technology for improved noise immunity
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•
•
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High commutation capability with maximum false trigger immunity
High junction operating temperature capability (Tj(max) = 150 °C)
High surge capability
Isolated mounting base with 2500 V (RMS) isolation
Least sensitive gate for highest noise immunity
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
Very high immunity to false turn-on by dV/dt
3. Applications
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Electronic thermostats (heating and cooling)
High power motor controls
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Absolute maximum rating
VDRM
IT(RMS)
ITSM
repetitive peak off-state
voltage
-
-
-
-
-
-
800
12
V
A
A
RMS on-state current
square-wave pulse; Tmb ≤ 116 °C;
Fig. 1; Fig. 2; Fig. 3
non-repetitive peak
forward current
full sine wave; tp = 20 ms; Tj(init) = 25 °C;
Fig. 4; Fig. 5
140
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C
-
-
-
-
153
150
A
Tj
junction temperature
°C
Static characteristics
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+
Tj = 25 °C; Fig. 7
2
2
2
-
-
-
50
50
50
mA
mA
mA
VD = 12 V; IT = 0.1 A; T2+ G-
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-
Tj = 25 °C; Fig. 7