Datasheet > BTA416X-800BT

BTA416X-800BT

更新时间： 2024-11-15 17:01:15

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瑞能 - WEEN		/
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描述
Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package in

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BTA416X-800BT 数据手册

BTA416X-800BT

3Q Hi-Com Triac

Rev.01 - 22 December 2020

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a TO220F "full pack" plastic package

intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This

"series B" triac will commutate the full RMS current at the maximum rated junction temperature

without the aid of a snubber. This device has high T_joperating capability.

2. Features and beneﬁts

•

3Q technology for improved noise immunity

•

High commutation capability with maximum false trigger immunity

High immunity to false turn-on by dV/dt

High surge capability

High T_j(max)

Least sensitive gate for highest noise immunity

Planar passivated for voltage ruggedness and reliability

Triggering in three quadrants only

Very high immunity to false turn-on by dV/dt

3. Applications

•

Electronic thermostats (heating and cooling)

High power motor controls

Rectiﬁer-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

800

RMS on-state current

full sine wave; T_h≤ 90 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on- full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

160

state current

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

176

150

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...12

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