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BTA416Y-800B PDF预览

BTA416Y-800B

更新时间: 2024-11-15 17:02:03
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 782K
描述
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulate

BTA416Y-800B 数据手册

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BTA416Y-800B  
3Q Hi-Com Triac  
Rev.03 - 30 May 2023  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a IITO220 internally insulated plastic  
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.  
This "series B" triac will commutate the full RMS current at the maximum rated junction temperature  
without the aid of a snubber. This device has high Tj operating capability and an internally isolated  
mounting base.  
2. Features and benefits  
3Q technology for improved noise immunity  
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
High surge capability  
High Tj(max)  
Isolated mounting base with 2500 V (RMS) isolation  
Least sensitive gate for highest noise immunity  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
Very high immunity to false turn-on by dV/dt  
3. Applications  
Electronic thermostats (heating and cooling)  
High power motor controls  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
800  
16  
V
A
A
RMS on-state current  
full sine wave; Tmb ≤ 108 °C;  
Fig. 1; Fig. 2; Fig. 3  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
160  
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
-
-
176  
150  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
2
2
-
-
-
50  
50  
50  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  

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