BTA425Y-800CT
3Q Hi-Com Triac
Rev.02 - 19 February 2024
Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a IITO220 internally insulated plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can
occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction
temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where
"high junction operating temperature capability" is required.
2. Features and benefits
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3Q technology for improved noise immunity
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2500 V RMS isolation voltage capability
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High junction operating temperature capability
High voltage capability
High current capability
Least sensitive gate for highest noise immunity
Internally insulated package
Internally isolated mounting base
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
UL1557 certified (Document number E346397)
3. Applications
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Applications subject to high temperature
Heating controls
High power motor control
High power switching
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Absolute maximum rating
VDRM
IT(RMS)
ITSM
repetitive peak off-state
voltage
-
-
-
-
-
-
800
25
V
A
A
RMS on-state current
full sine wave; Tmb ≤ 104 °C;
Fig. 1; Fig. 2; Fig. 3
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;
250
state current
Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms
-
-
-
-
275
150
A
Tj
junction temperature
°C
Static characteristics
IGT gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
-
-
-
-
-
-
35
35
35
mA
mA
mA
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7