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BTA425Y-800CT PDF预览

BTA425Y-800CT

更新时间: 2024-04-09 19:02:33
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
12页 604K
描述
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulate

BTA425Y-800CT 数据手册

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BTA425Y-800CT  
3Q Hi-Com Triac  
Rev.02 - 19 February 2024  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a IITO220 internally insulated plastic  
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can  
occur. This "series CT" triac will commutate the full RMS current at the maximum rated junction  
temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where  
"high junction operating temperature capability" is required.  
2. Features and benefits  
3Q technology for improved noise immunity  
2500 V RMS isolation voltage capability  
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
High junction operating temperature capability  
High voltage capability  
High current capability  
Least sensitive gate for highest noise immunity  
Internally insulated package  
Internally isolated mounting base  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
UL1557 certified (Document number E346397)  
3. Applications  
Applications subject to high temperature  
Heating controls  
High power motor control  
High power switching  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
800  
25  
V
A
A
RMS on-state current  
full sine wave; Tmb ≤ 104 °C;  
Fig. 1; Fig. 2; Fig. 3  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
250  
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
-
-
275  
150  
A
Tj  
junction temperature  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
-
-
-
-
-
-
35  
35  
35  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  

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