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BTA41-800B PDF预览

BTA41-800B

更新时间: 2024-11-13 22:09:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 栅极触发装置可控硅三端双向交流开关局域网
页数 文件大小 规格书
6页 66K
描述
40A TRIACS

BTA41-800B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:PLASTIC, TOP3, 3 PIN针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.31Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
换向电压的临界上升率-最小值:5 V/us关态电压最小值的临界上升速率:250 V/us
最大直流栅极触发电流:100 mA最大直流栅极触发电压:1.5 V
最大维持电流:80 mAJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245认证状态:Not Qualified
最大均方根通态电流:40 A断态重复峰值电压:800 V
子类别:TRIACs表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
触发设备类型:4 QUADRANT LOGIC LEVEL TRIACBase Number Matches:1

BTA41-800B 数据手册

 浏览型号BTA41-800B的Datasheet PDF文件第2页浏览型号BTA41-800B的Datasheet PDF文件第3页浏览型号BTA41-800B的Datasheet PDF文件第4页浏览型号BTA41-800B的Datasheet PDF文件第5页浏览型号BTA41-800B的Datasheet PDF文件第6页 
BTA40 and BTA/BTB41 Series  
STANDARD  
40A TRIACS  
MAIN FEATURES:  
Symbol  
A2  
Value  
40  
Unit  
G
I
A
T(RMS)  
A1  
V
/V  
600 and 800  
V
DRM RRM  
A1  
A2  
G
I
50  
mA  
GT (Q )  
1
DESCRIPTION  
Available in high power packages, the BTA/  
BTB40-41 series is suitable for general purpose  
AC power switching. They can be used as an ON/  
OFF function in applications such as static relays,  
heating regulation, water heaters, induction motor  
starting circuits, welding equipment... or for phase  
control operation in high power motor speed con-  
trollers, soft start circuits...  
RD91  
(BTA40)  
A2  
Thanks to their clip assembly technique, they  
provide a superior performance in surge current  
handling capabilities.  
By using an internal ceramic pad, the BTA series  
provides voltage insulated tab (rated at 2500 V  
RMS) complying with UL standards (File ref.:  
E81734).  
A1  
A1  
A2  
A2  
G
G
TOP3 Insulated  
(BTA41)  
TOP3  
(BTB41)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
I
RMS on-state current  
(full sine wave)  
RD91  
A
T(RMS)  
Tc = 80°C  
TOP3  
40  
TOP3 Ins.  
F = 60 Hz  
F = 50 Hz  
Tc = 70°C  
t = 16.7 ms  
t = 20 ms  
I
Non repetitive surge peak on-state  
current (full cycle, Tj initial = 25°C)  
420  
400  
A
TSM  
I t  
tp = 10 ms  
880  
A s  
I t Value for fusing  
Critical rate of rise of on-state current  
dI/dt  
F = 120 Hz  
Tj = 125°C  
Tj = 25°C  
50  
A/µs  
I
= 2 x I , tr 100 ns  
G
GT  
V
/V  
Non repetitive surge peak off-state  
voltage  
DRM RRM  
V
/V  
tp = 10 ms  
V
DSM RSM  
+ 100  
I
Peak gate current  
tp = 20 µs  
Tj = 125°C  
Tj = 125°C  
8
A
GM  
P
Average gate power dissipation  
1
W
G(AV)  
T
Storage junction temperature range  
Operating junction temperature range  
- 40 to + 150  
- 40 to + 125  
stg  
°C  
T
j
October 2001 - Ed: 4  
1/6  

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