Datasheet > BTA416Y-600B

BTA416Y-600B

更新时间： 2024-04-09 19:02:52

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
13页	794K
描述
Planar passivated high commutation three quadrant triac in a IITO-220 internally insulated plastic

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BTA416Y-600B 数据手册

BTA416Y-600B

3Q Hi-Com Triac

Rev.02 - 05 July 2021

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in an IITO220 internally insulated plastic

package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.

This "series B" triac will commutate the full RMS current at the maximum rated junction temperature

without the aid of a snubber. This device has high T_joperating capability and an internally isolated

mounting base.

2. Features and beneﬁts

•

3Q technology for improved noise immunity

•

High commutation capability with maximum false trigger immunity

High surge capability

High T_j(max)

Isolated mounting base with 2500 V (RMS) isolation

Least sensitive gate for highest noise immunity

Planar passivated for voltage ruggedness and reliability

Triggering in three quadrants only

Very high immunity to false turn-on by dV/dt

3. Applications

•

Electronic thermostats (heating and cooling)

High power motor controls

Rectiﬁer-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Absolute maximum rating

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

600

RMS on-state current

full sine wave; T_mb≤ 108 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on- full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

160

state current

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

176

150

T_j

junction temperature

°C

Static characteristics

I_GTgate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...13

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