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BTA416Y-600C PDF预览

BTA416Y-600C

更新时间： 2024-11-15 17:01:19
品牌 Logo 应用领域
瑞能 - WEEN /
页数 文件大小 规格书
13页 776K
描述
Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulate

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BTA416Y-600C 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：not_compliant
HTS代码：8541.30.00.80风险等级：5.68
Is Samacsys：N外壳连接：ISOLATED
配置：SINGLEJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：16 A参考标准：IEC-60134
断态重复峰值电压：600 V表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
触发设备类型：4 QUADRANT LOGIC LEVEL TRIACBase Number Matches：1

BTA416Y-600C 数据手册

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BTA416Y-600C  
3Q Hi-Com Triac  
Rev.03 - 30 January 2024  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a IITO220 internally insulated plastic  
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.  
This "series C" triac will commutate the full RMS current at the maximum rated junction temperature  
without the aid of a snubber. This device has high Tj operating capability and an internally isolated  
mounting base.  
2. Features and benefits  
•
3Q technology for improved noise immunity  
•
•
•
•
•
•
•
•
•
High commutation capability with maximum false trigger immunity  
High immunity to false turn-on by dV/dt  
High surge capability  
High Tj(max)  
Isolated mounting base with 2500 V (RMS) isolation  
Less sensitive gate for high noise immunity  
Planar passivated for voltage ruggedness and reliability  
Triggering in three quadrants only  
UL1557 certified (Document number E346397)  
3. Applications  
•
•
•
Electronic thermostats (heating and cooling)  
High power motor controls  
Rectifier-fed DC inductive loads e.g. DC motors and solenoids  
4. Quick reference data  
Table 1. Quick reference data  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Absolute maximum rating  
VDRM  
IT(RMS)  
ITSM  
repetitive peak off-state  
voltage  
-
-
-
-
-
-
600  
16  
V
A
A
RMS on-state current  
full sine wave; Tmb ≤ 108 °C;  
Fig. 1; Fig. 2; Fig. 3  
non-repetitive peak on- full sine wave; Tj(init) = 25 °C; tp = 20 ms;  
160  
state current  
Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms  
-
-
-
-
176  
A
Tj  
junction temperature  
150  
°C  
Static characteristics  
IGT gate trigger current  
VD = 12 V; IT = 0.1 A; T2+ G+;  
Tj = 25 °C; Fig. 7  
2
2
2
-
-
-
35  
35  
35  
mA  
mA  
mA  
VD = 12 V; IT = 0.1 A; T2+ G-;  
Tj = 25 °C; Fig. 7  
VD = 12 V; IT = 0.1 A; T2- G-;  
Tj = 25 °C; Fig. 7  
1234567...13

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