Datasheet > BTA416B-800CT

BTA416B-800CT

更新时间： 2024-11-15 17:01:51

品牌	Logo	应用领域
瑞能 - WEEN		/
页数	文件大小	规格书
12页	565K
描述
Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable plast

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BTA416B-800CT 数据手册

BTA416B-800CT

3Q Hi-Com Triac

Rev.01 - 28 June 2023

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a TO263 (D2PAK) surface mountable

plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt

can occur. This "series C" triac will commutate the full RMS current at the maximum rated junction

temperature without the aid of a snubber. This device has high T_joperating capability.

2. Features and beneﬁts

•

3Q technology for improved noise immunity

•

High commutation capability with maximum false trigger immunity

High immunity to false turn-on by dV/dt

High surge capability

High T_j(max)

Least sensitive gate for highest noise immunity

Surface mountable plastic package

Planar passivated for voltage ruggedness and reliability

3. Applications

•

Electronic thermostats (heating and cooling)

High power motor controls

Rectiﬁer-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Notes

Values

Unit

Absolute maximum rating

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

800

RMS on-state current

full sine wave; T_mb≤ 139 °C;

Fig. 1; Fig. 2; Fig. 3

non-repetitive peak on- full sine wave; T_j(init)= 25 °C; t_p= 20 ms;

160

state current

Fig. 4; Fig. 5

full sine wave; T_j(init)= 25 °C; t_p= 16.7 ms

176

150

Typ

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Notes Min

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...12

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