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BTA412Y-600ET PDF预览

BTA412Y-600ET

更新时间: 2024-01-08 20:03:24
品牌 Logo 应用领域
瑞能 - WEEN 三端双向交流开关
页数 文件大小 规格书
14页 249K
描述
3Q Hi-Com Triac

BTA412Y-600ET 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknownFactory Lead Time:13 weeks
风险等级:5.68触发设备类型:SNUBBERLESS TRIAC
Base Number Matches:1

BTA412Y-600ET 数据手册

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BTA412Y-600ET  
3Q Hi-Com Triac  
23 November 2018  
Product data sheet  
1. General description  
Planar passivated high commutation three quadrant triac in a IITO-220 internally insulated plastic  
package. This "series ET" triac balances the requirements of commutation performance and gate  
sensitivity and is intended for interfacing with low power drivers including microcontrollers. It is  
used in applications where " high juction operating temperature " capability is required.  
2. Features and benefits  
3Q technology for improved noise immunity  
High commutation capability with sensitive gate  
High blocking voltage capability  
Direct interfacing with low power drives and microcontrollers  
High juction operating temperature (Tj(max) = 150 °C)  
Isolated mounting base with 2500 V (RMS) isolation  
Internally insulated package  
Planar passivated for voltage ruggedness and reliability  
Good immunity to false turn-on by dV/dt  
Triggering in three quadrants only  
3. Applications  
Electronic thermostats (heating and cooling)  
Motor controls e.g. vacuum cleaners  
Refrigeration and air-conditioner compressor controls  
Excellent for AC switching and phase control such as heating, lighting  
Typical applications are AC solid-state switches, light, dimmers, power tools  
High juction operating temperature (Tj(max) = 150 °C)  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VDRM  
repetitive peak off-  
state voltage  
-
-
600  
V
IT(RMS)  
ITSM  
RMS on-state current  
full sine wave; Tmb ≤ 117 °C; Fig. 1;  
Fig. 2; Fig. 3  
-
-
-
-
-
-
-
-
12  
A
non-repetitive peak on- full sine wave; Tj(init) = 25 °C;  
state current  
140  
150  
150  
A
tp = 20 ms; Fig. 4; Fig. 5  
full sine wave; Tj(init) = 25 °C;  
tp = 16.7 ms  
A
Tj  
junction temperature  
°C  
 
 
 
 

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