Datasheet > BTA412Y-600B

BTA412Y-600B

更新时间： 2024-04-09 19:01:02

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描述
Planar passivated high commutation three quadrant triac in a IITO220 internally insulated plastic

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BTA412Y-600B 数据手册

BTA412Y-600B

3Q Hi-Com Triac

Rev.03 - 15 April 2019

Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a IITO220 internally insulated plastic

package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.

This "series B" triac will commutate the full RMS current at the maximum rated junction temperature

without the aid of a snubber. This device has high T_joperating capability and an internally isolated

mounting base.

2. Features and beneﬁts

•

3Q technology for improved noise immunity

•

High commutation capability with maximum false trigger immunity

High junction operating temperature capability (T_j(max)= 150 °C)

High surge capability

Isolated mounting base with 2500 V (RMS) isolation

Least sensitive gate for highest noise immunity

Planar passivated for voltage ruggedness and reliability

Triggering in three quadrants only

Very high immunity to false turn-on by dV/dt

3. Applications

•

Electronic thermostats (heating and cooling)

High power motor controls

Rectiﬁer-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

V_DRM

I_T(RMS)

I_TSM

repetitive peak oﬀ-state

voltage

600

RMS on-state current

full sine wave; T_mb≤ 116°C;

Fig.1; Fig.2; Fig.3

non-repetitive peak on- full sine wave; t_p= 20 ms; T_j(init)= 25 °C;

140

state current

Fig.4; Fig.5

full sine wave; t_p= 16.7 ms; T_j(init)= 25 °C

153

150

T_j

junction temperature

°C

Symbol Parameter

Static characteristics

Conditions

Min

Typ

Max

Unit

I_GT

gate trigger current

V_D= 12 V; I_T= 0.1 A; T2+ G+;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2+ G-;

T_j= 25 °C; Fig. 7

V_D= 12 V; I_T= 0.1 A; T2- G-;

T_j= 25 °C; Fig. 7

12 3 4 5 6 7...12

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