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BTA1721N3 PDF预览

BTA1721N3

更新时间: 2024-11-24 04:01:11
品牌 Logo 应用领域
全宇昕 - CYSTEKEC 晶体晶体管
页数 文件大小 规格书
5页 258K
描述
General Purpose PNP Epitaxial Planar Transistor

BTA1721N3 数据手册

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Spec. No. : C308N3  
Issued Date : 2002.06.11  
Revised Date : 2005.06.01  
Page No. : 1/5  
CYStech Electronics Corp.  
General Purpose PNP Epitaxial Planar Transistor  
BTA1721N3  
Description  
High breakdown voltage.  
Low collector output capacitance.  
Ideal for chroma circuit.  
Pb-free package  
Symbol  
Outline  
BTA1721N3  
SOT-23  
BBase  
CCollector  
EEmitter  
Absolute Maximum Ratings (Ta=25°C)  
Parameter  
Symbol  
Limits  
Unit  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
VCBO  
VCEO  
VEBO  
IC  
-300  
-300  
V
V
-5  
V
-500  
mA  
mW  
°C  
°C  
Power Dissipation  
Pd  
225  
Junction Temperature  
Storage Temperature  
Tj  
Tstg  
150  
-55~+150  
BTA1721N3  
CYStek Product Specification  

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