Datasheet > BT139XSERIESE

BT139XSERIESE

更新时间： 2025-09-11 23:35:55

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恩智浦 - NXP		可控硅栅
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描述
Triacs sensitive gate

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BT139XSERIESE 数据手册

Philips Semiconductors

Product specification

Triacs

sensitive gate

BT139X series E

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated, sensitive gate

triacs in a full pack plastic envelope,

intended for use in general purpose

bidirectional switching and phase

control applications, where high

sensitivity is required in all four

quadrants.

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BT139X- 500E 600E 800E

V_DRM

Repetitive peak off-state

voltages

500

600

800

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak on-state

current

140

PINNING - SOT186A

PIN CONFIGURATION

SYMBOL

DESCRIPTION

main terminal 1

case

main terminal 2

gate

2 3

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

500¹

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_hs≤ 38 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

140

150

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 20 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997

Rev 1.200

12 3 4 5 6

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