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BT145-600R PDF预览

BT145-600R

更新时间: 2024-11-12 22:39:39
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅整流器
页数 文件大小 规格书
6页 46K
描述
Thyristors

BT145-600R 技术参数

生命周期:Transferred零件包装代码:TO-220AB
包装说明:PLASTIC, TO-220AB, 3 PIN针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.15Is Samacsys:N
外壳连接:ANODE标称电路换相断开时间:70 µs
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:35 mA最大直流栅极触发电压:1 V
最大维持电流:60 mAJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3最大漏电流:1 mA
通态非重复峰值电流:330 A元件数量:1
端子数量:3最大通态电流:16000 A
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大均方根通态电流:25 A
重复峰值关态漏电流最大值:1000 µA断态重复峰值电压:600 V
重复峰值反向电压:600 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE触发设备类型:SCR
Base Number Matches:1

BT145-600R 数据手册

 浏览型号BT145-600R的Datasheet PDF文件第2页浏览型号BT145-600R的Datasheet PDF文件第3页浏览型号BT145-600R的Datasheet PDF文件第4页浏览型号BT145-600R的Datasheet PDF文件第5页浏览型号BT145-600R的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Thyristors  
BT145 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glasspassivatedthyristorsinaplastic  
envelope, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
applications  
bidirectional  
requiring  
blocking  
high  
BT145- 500R 600R 800R  
voltage  
VDRM  
VRRM  
IT(AV)  
,
Repetitive peak off-state  
500  
600  
800  
V
capability and high thermal cycling  
performance. Typical applications  
include motor control, industrial and  
domestic lighting, heating and static  
switching.  
voltages  
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
16  
25  
300  
16  
25  
300  
16  
25  
300  
A
A
A
IT(RMS)  
ITSM  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
tab  
a
k
2
anode  
gate  
3
g
1 2 3  
tab anode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-500R -600R -800R  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
5001  
6001  
800  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Tmb 101 ˚C  
-
-
16  
25  
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 25 ˚C prior to  
surge  
t = 10 ms  
-
-
-
-
300  
330  
450  
200  
A
A
t = 8.3 ms  
t = 10 ms  
ITM = 50 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
A2s  
A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
5
5
5
20  
0.5  
150  
125  
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
-
-
over any 20 ms period  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
October 1997  
1
Rev 1.200  

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