Datasheet > BT145B_SERIES

BT145B_SERIES

更新时间： 2024-09-24 23:35:55

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
6页	43K
描述
Thyristors

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BT145B_SERIES 数据手册

Philips Semiconductors

Product specification

Thyristors

BT145B series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glasspassivatedthyristorsinaplastic

envelope, suitable for surface

mounting, intended for use in

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BT145B- 500R 600R 800R

applications

bidirectional

requiring

blocking

high

V_DRM

V_RRM

I_T(AV)

Repetitive peak off-state

500

600

800

voltage

voltages

capability and high thermal cycling

performance. Typical applications

include motor control, industrial and

domestic lighting, heating and static

switching.

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

300

I_T(RMS)

I_TSM

PINNING - SOT404

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

gate

mb anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-500R -600R -800R

V_DRM, V_RRMRepetitive peak off-state

voltages

500¹

600¹

800

I_T(AV)

I_T(RMS)

I_TSM

Average on-state current half sine wave; T_mb≤ 101 ˚C

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave; T_j= 25 ˚C prior to

surge

t = 10 ms

300

330

450

200

t = 8.3 ms

t = 10 ms

I_TM= 50 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

A²s

A/µs

I_GM

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

0.5

150

125

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

May 1997

Rev 1.000

12 3 4 5 6

中文翻译

下载PDF

与BT145B_SERIES相关器件

型号	品牌	获取价格	描述	数据表
BT145B-500R	NXP	获取价格	Silicon Controlled Rectifier, 25 A, 500 V, SCR
BT145B-600R	NXP	获取价格	Silicon Controlled Rectifier, 25 A, 600 V, SCR
BT145B-600R	PHILIPS	获取价格	Silicon Controlled Rectifier, 16000mA I(T), 600V V(DRM),
BT145B-800R	NXP	获取价格	Silicon Controlled Rectifier, 16000mA I(T), 800V V(DRM),
BT145SERIES	ETC	获取价格	Thyristors logic level
BT145X-800R	WEEN	获取价格	SCR
BT148	NXP	获取价格	Thyristors logic level
BT148_SERIES	ETC	获取价格	Thyristors logic level
BT148-400R	NXP	获取价格	Thyristors logic level
BT148-400R	WEEN	获取价格	Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended for u