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BT148-500R PDF预览

BT148-500R

更新时间: 2024-09-24 22:39:39
品牌 Logo 应用领域
恩智浦 - NXP 栅极触发装置可控硅整流器
页数 文件大小 规格书
6页 47K
描述
Thyristors logic level

BT148-500R 技术参数

Source Url Status Check Date:2013-06-14 00:00:00是否无铅: 不含铅
是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliantHTS代码:8541.30.00.80
风险等级:5.17Is Samacsys:N
其他特性:SENSITIVE GATE外壳连接:ANODE
标称电路换相断开时间:100 µs配置:SINGLE
关态电压最小值的临界上升速率:5 V/us最大直流栅极触发电流:0.2 mA
最大直流栅极触发电压:1.5 V最大维持电流:6 mA
JESD-30 代码:R-PSIP-T3JESD-609代码:e3
最大漏电流:0.5 mA通态非重复峰值电流:25 A
元件数量:1端子数量:3
最大通态电流:2500 A最高工作温度:125 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大均方根通态电流:4 A
重复峰值关态漏电流最大值:500 µA断态重复峰值电压:500 V
重复峰值反向电压:500 V子类别:Silicon Controlled Rectifiers
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:SCR
Base Number Matches:1

BT148-500R 数据手册

 浏览型号BT148-500R的Datasheet PDF文件第2页浏览型号BT148-500R的Datasheet PDF文件第3页浏览型号BT148-500R的Datasheet PDF文件第4页浏览型号BT148-500R的Datasheet PDF文件第5页浏览型号BT148-500R的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Thyristors  
logic level  
BT148 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
thyristors in a plastic envelope,  
intended for use in general purpose  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BT148- 400R 500R 600R  
switching  
and  
phase  
control  
VDRM  
VRRM  
IT(AV)  
,
Repetitive peak off-state  
400  
500  
600  
V
applications. These devices are  
intended to be interfaced directly to  
microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
voltages  
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
2.5  
4
35  
2.5  
4
35  
2.5  
4
35  
A
A
A
IT(RMS)  
ITSM  
PINNING - SOT82  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
a
k
2
anode  
gate  
3
g
2
3
1
tab anode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-400R -500R -600R  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
4001  
5001  
6001  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Tmb 113 ˚C  
-
-
2.5  
4
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 25 ˚C prior to  
surge  
t = 10 ms  
-
-
-
-
35  
38  
6.1  
50  
A
A
t = 8.3 ms  
t = 10 ms  
ITM = 10 A; IG = 50 mA;  
dIG/dt = 50 mA/µs  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
A2s  
A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
2
5
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
5
-
-
5
over any 20 ms period  
0.5  
150  
1252  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kor less.  
October 1997  
1
Rev 1.300  

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