Datasheet > BT148

BT148

更新时间： 2024-11-12 22:39:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
6页	47K
描述
Thyristors logic level

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BT148 数据手册

Philips Semiconductors

Product specification

Thyristors

logic level

BT148 series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Glass passivated, sensitive gate

thyristors in a plastic envelope,

intended for use in general purpose

SYMBOL PARAMETER

MAX. MAX. MAX. UNIT

BT148- 400R 500R 600R

switching

and

phase

control

V_DRM

V_RRM

I_T(AV)

Repetitive peak off-state

400

500

600

applications. These devices are

intended to be interfaced directly to

microcontrollers, logic integrated

circuits and other low power gate

trigger circuits.

voltages

Average on-state current

RMS on-state current

Non-repetitive peak on-state

current

2.5

I_T(RMS)

I_TSM

PINNING - SOT82

PIN CONFIGURATION

SYMBOL

DESCRIPTION

cathode

anode

gate

tab anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-400R -500R -600R

V_DRM, V_RRMRepetitive peak off-state

voltages

400¹

500¹

600¹

I_T(AV)

I_T(RMS)

I_TSM

Average on-state current half sine wave; T_mb≤ 113 ˚C

2.5

RMS on-state current

Non-repetitive peak

on-state current

all conduction angles

half sine wave; T_j= 25 ˚C prior to

surge

t = 10 ms

6.1

t = 8.3 ms

t = 10 ms

I_TM= 10 A; I_G= 50 mA;

dI_G/dt = 50 mA/µs

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

A²s

A/µs

I_GM

Peak gate current

Peak gate voltage

Peak reverse gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

˚C

V_GM

V_RGM

P_GM

P_G(AV)

T_stg

over any 20 ms period

0.5

150

125²

-40

T_j

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may

switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.

October 1997

Rev 1.300

12 3 4 5 6

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与BT148相关器件

型号	品牌	获取价格	描述	数据表
BT148_SERIES	ETC	获取价格	Thyristors logic level
BT148-400R	NXP	获取价格	Thyristors logic level
BT148-400R	WEEN	获取价格	Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended for u
BT148-500R	NXP	获取价格	Thyristors logic level
BT148-500R	TGS	获取价格	Thyristors logic level
BT148-500R	WEEN	获取价格	Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended for u
BT148-500R,127	NXP	获取价格	BT148-500R
BT148-600R	NXP	获取价格	Thyristors logic level
BT148-600R	WEEN	获取价格	Planar passivated SCR with sensitive gate in a SIP3 (SOT82) plastic package intended for u
BT148-600R,127	NXP	获取价格	BT148-600R