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BT145B-800R PDF预览

BT145B-800R

更新时间: 2024-11-14 03:40:27
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
6页 40K
描述
Silicon Controlled Rectifier, 16000mA I(T), 800V V(DRM),

BT145B-800R 数据手册

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Philips Semiconductors  
Product specification  
Thyristors  
BT145B series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glasspassivatedthyristorsinaplastic  
envelope, suitable for surface  
mounting, intended for use in  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BT145B- 500R 600R 800R  
applications  
bidirectional  
requiring  
blocking  
high  
VDRM  
VRRM  
IT(AV)  
,
Repetitive peak off-state  
500  
600  
800  
V
voltage  
voltages  
capability and high thermal cycling  
performance. Typical applications  
include motor control, industrial and  
domestic lighting, heating and static  
switching.  
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
16  
25  
300  
16  
25  
300  
16  
25  
300  
A
A
A
IT(RMS)  
ITSM  
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
mb  
a
k
2
anode  
gate  
3
2
mb anode  
1
3
g
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-500R -600R -800R  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
5001  
6001  
800  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Tmb 101 ˚C  
-
-
16  
25  
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 25 ˚C prior to  
surge  
t = 10 ms  
-
-
-
-
300  
330  
450  
200  
A
A
t = 8.3 ms  
t = 10 ms  
ITM = 50 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
A2s  
A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
5
5
5
20  
0.5  
150  
125  
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
-
-
over any 20 ms period  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
May 1997  
1
Rev 1.000  

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