Philips Semiconductors
Product specification
Thyristors
BT145B series
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic
envelope, suitable for surface
mounting, intended for use in
SYMBOL PARAMETER
MAX. MAX. MAX. UNIT
BT145B- 500R 600R 800R
applications
bidirectional
requiring
blocking
high
VDRM
VRRM
IT(AV)
,
Repetitive peak off-state
500
600
800
V
voltage
voltages
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
16
25
300
16
25
300
16
25
300
A
A
A
IT(RMS)
ITSM
PINNING - SOT404
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
cathode
mb
a
k
2
anode
gate
3
2
mb anode
1
3
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500R -600R -800R
VDRM, VRRM Repetitive peak off-state
voltages
-
5001
6001
800
V
IT(AV)
IT(RMS)
ITSM
Average on-state current half sine wave; Tmb ≤ 101 ˚C
-
-
16
25
A
A
RMS on-state current
Non-repetitive peak
on-state current
all conduction angles
half sine wave; Tj = 25 ˚C prior to
surge
t = 10 ms
-
-
-
-
300
330
450
200
A
A
t = 8.3 ms
t = 10 ms
ITM = 50 A; IG = 0.2 A;
dIG/dt = 0.2 A/µs
I2t
dIT/dt
I2t for fusing
Repetitive rate of rise of
on-state current after
triggering
A2s
A/µs
IGM
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
-
5
5
5
20
0.5
150
125
A
V
V
W
W
˚C
˚C
VGM
VRGM
PGM
PG(AV)
Tstg
-
-
-
-
over any 20 ms period
-40
-
Tj
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
May 1997
1
Rev 1.000