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BST60-Q PDF预览

BST60-Q

更新时间: 2024-11-21 15:18:35
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
8页 184K
描述
PNP Darlington transistorProduction

BST60-Q 数据手册

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BST60-Q  
PNP Darlington transistor  
27 October 2023  
Product data sheet  
1. General description  
PNP Darlington transistor in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic  
package.  
NPN complement: BST50-Q  
2. Features and benefits  
Integrated diode and resistor  
Qualified according to AEC-Q101 and recommended for use in automotive applications  
3. Applications  
Industrial switching applications such as:  
Print hammer  
Solenoid  
Relay and lamp driving  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
VCEO  
collector-emitter  
voltage  
open base  
-
-
-45  
V
IC  
collector current  
DC current gain  
-
-
-
-1  
-
A
hFE  
VCE = -10 V; IC = -150 mA; pulsed; tp ≤  
300 µs; δ ≤ 0.02; Tamb = 25 °C  
1000  
5. Pinning information  
Table 2. Pinning information  
Pin  
1
Symbol  
Description  
emitter  
Simplified outline  
Graphic symbol  
E
C
B
2
2
collector  
base  
3
3
3
2
1
SOT89  
1
sym081  
 
 
 
 
 

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