生命周期: | Obsolete | 零件包装代码: | SOT-89 |
包装说明: | SMALL OUTLINE, R-PSSO-F3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.17 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 配置: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
最小直流电流增益 (hFE): | 2000 | JEDEC-95代码: | TO-243 |
JESD-30 代码: | R-PSSO-F3 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 200 MHz | VCEsat-Max: | 1.3 V |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BST61TRL13 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon | |
BST61TRL13 | NXP |
获取价格 |
TRANSISTOR 1000 mA, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243, PLASTIC, SC-62, 3 PIN, BIP G | |
BST62 | NEXPERIA |
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PNP Darlington transistorProduction | |
BST62 | YAGEO |
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Small Signal Bipolar Transistor, 0.5A I(C), 90V V(BR)CEO, 1-Element, PNP, Silicon | |
BST62 | NXP |
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PNP Darlington transistors | |
BST62_70 | ETC |
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BST62-70 | ZETEX |
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PNP SILICON PLANAR DARLINGTON TRANSISTOR | |
BST62-T | NXP |
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TRANSISTOR 1000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, TO-2 | |
BST62TA | DIODES |
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Power Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, | |
BST62-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |