Datasheet > BST62_70

BST62_70

更新时间： 2024-01-02 18:51:03

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BST62_70 数据手册

SOT89 PNP SILICON PLANAR

DARLINGTON TRANSISTOR

BST62-70

ISSUE 3 – J ANUARY 1996

✪

FEATURES

Fast Switching

High h_FE

PARTMAKING DETAIL —

627

SOT89

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Co lle cto r-Ba s e Vo lta g e

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

-85

-72

-10

Pe a Pu ls e Cu rre n t

-1.5

Co n tin u o u s Co lle cto r Cu rre n t

Bas e Cu rren t

I_C

-500

m A

I_B

-100

Po w e r Dis s ip a tio n a t T_{a m b}=25°C

P_{to t}

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

T_j:T_{s tg}

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

S YMBOL MIN.

MAX.

UNIT

CONDITIONS .

Co lle cto r-Ba s e

Bre a kd o w n Vo ltag e

V_(BR)CBO

-85

-72

-10

I_C=-10µA, I_E=0

Co lle cto r-Em itte r

Bre a kd o w n Vo ltag e

V_(BR)CEO

I_C=-10m A, I_B=0*

Em itte r-Ba s e Bre a kd o w n V_(BR)EBO

Vo lta g e

I_E=-10µA, I_C=0

Em itte r Cu t-Off Cu rren t

I_EBO

I_CES

-10

V_EB=-8V, I_E=0

V_CE=-72V, I_C=0

µA

Co lle cto r-Em itte r

Cu t-Off Cu rren t

Co lle cto r-Em itte r

S atu ra tio n Vo lta g e

V_{CE(s a t)}

-1.3

I_C=-500m A, I_B=-0.5m A

T_j=150°C

Bas e -Em itte r

S atu ra tio n Vo lta g e

V_{BE(s a t)}

h_FE

-1.9

I_C=-500m A, I_B=-0.5m A

S ta tic Fo rw a rd Cu rren t

Tra n sfe r Ra tio

I_C=-150m A, V_CE=-10V*

I_C=-500m A, V_CE=-10V*

Tu rn On Tim e

Tu rn Off Tim e

t_{o n}

400 Typical

1.5K Typical

n s

I_C=-500m A

_{Bo n}=I_{Bo ff}=-0.5m A

t_{o ff}

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

For typical characteristics graphs see FZTA63 (SOT223) datasheet.

3 - 82

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