生命周期: | Obsolete | 零件包装代码: | TO-92 |
包装说明: | CYLINDRICAL, O-PBCY-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.84 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 180 V |
最大漏极电流 (ID): | 0.3 A | 最大漏源导通电阻: | 10 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 10 pF |
JEDEC-95代码: | TO-92 | JESD-30 代码: | O-PBCY-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | ROUND | 封装形式: | CYLINDRICAL |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | BOTTOM | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BST78 | NXP |
获取价格 |
TRANSISTOR 0.75 A, 450 V, 14 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-126, FET General Purpos | |
BST80 | NXP |
获取价格 |
N-channel enhancement mode vertical D-MOS transistor | |
BST80115 | NXP |
获取价格 |
TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BST80135 | NXP |
获取价格 |
TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BST80-T | NXP |
获取价格 |
TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BST80T/R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 500MA I(D) | SOT-89 | |
BST80-TAPE-13 | NXP |
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TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BST80-TAPE-7 | NXP |
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TRANSISTOR 500 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si | |
BST80TRL | YAGEO |
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Small Signal Field-Effect Transistor, 0.4A I(D), 80V, 1-Element, N-Channel, Silicon, Metal | |
BST80TRL | NXP |
获取价格 |
TRANSISTOR 400 mA, 80 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FET General Purpose Small Si |