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BST76AT/R PDF预览

BST76AT/R

更新时间: 2024-10-01 12:58:35
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管
页数 文件大小 规格书
12页 81K
描述
TRANSISTOR 300 mA, 180 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, PLASTIC, SC-43, SOT-54 (TO-92) VARIANT, 3 PIN, FET General Purpose Small Signal

BST76AT/R 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.84
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:180 V
最大漏极电流 (ID):0.3 A最大漏源导通电阻:10 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):10 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BST76AT/R 数据手册

 浏览型号BST76AT/R的Datasheet PDF文件第2页浏览型号BST76AT/R的Datasheet PDF文件第3页浏览型号BST76AT/R的Datasheet PDF文件第4页浏览型号BST76AT/R的Datasheet PDF文件第5页浏览型号BST76AT/R的Datasheet PDF文件第6页浏览型号BST76AT/R的Datasheet PDF文件第7页 
DISCRETE SEMICONDUCTORS  
DATA SHEET  
BST76A  
N-channel enhancement mode  
vertical D-MOS transistor  
1997 Jun 20  
Product specification  
Supersedes data of April 1995  
File under Discrete Semiconductors, SC13b  

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