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BSS138W PDF预览

BSS138W

更新时间: 2024-02-04 08:48:22
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管场效应晶体管
页数 文件大小 规格书
6页 250K
描述
N 沟道逻辑电平增强型场效应晶体管 50V,210mA,3.5Ω

BSS138W 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.56
Base Number Matches:1类别:Diodes
配置:SingleChannel Polarity:N
ESD:NMax PD(W):0.2
Min PD(W):50Max VGS (V):±20
Max ID(A):0.2Max IGSS(uA):±1
Max VGS(th) (V):1.5RDS(on)(mΩ) @ 25℃ 10V Typ:1400
RDS(on)(mΩ) @ 25℃ 10V Max:3500AEC Qualified:NO
最高工作温度:150最低工作温度:-55
MSL等级:1生命周期:Active
是否无铅:Yes符合Reach:Yes
符合RoHS:YesECCN代码:EAR99
Package Outlines:SOT-323

BSS138W 数据手册

 浏览型号BSS138W的Datasheet PDF文件第2页浏览型号BSS138W的Datasheet PDF文件第3页浏览型号BSS138W的Datasheet PDF文件第4页浏览型号BSS138W的Datasheet PDF文件第5页浏览型号BSS138W的Datasheet PDF文件第6页 
DATA SHEET  
www.onsemi.com  
N-Channel Logic Level  
Enhancement Mode Field  
Effect Transistor  
SOT323, 3 Lead, 1.25X2  
CASE 419AB  
BSS138W  
Description  
D
These NChannel Enhancement Mode Field Effect Transistor.  
These products have been Designed to minimize onstate resistance  
while provide rugged, reliable, and fast switching performance.  
These products are particularly suited for low voltage, low current  
applications such as small servo motor control, power MOSFET gate  
drivers, and other switching applications.  
S
G
MARKING DIAGRAM  
Features  
R  
= 3.5 W @ V = 10 V, I = 0.22 A  
GS D  
= 6.0 W @ V = 4.5 V, I = 0.22 A  
GS D  
DS(on)  
R
DS(on)  
High Density Cell Design For Extremely Low R  
Rugged and Reliable  
DS(on)  
Y
A138  
Compact Industry Standard SOT323 Surface Mount Package  
These Devices are PbFree and Halide Free  
Y
A
138  
= Year  
= Assembly Plant Code  
= Specific Device Code  
ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise noted  
A
Symbol  
Parameter  
Drain to Source Voltage  
Gate to Source Voltage  
Value  
50  
Unit  
V
V
DSS  
V
GSS  
20  
V
ORDERING INFORMATION  
I
D
A
A
Drain Current  
Continuous (Note 1)  
0.21  
0.84  
Device  
Shipping  
3000 /  
Tape & Reel  
Package  
Pulsed  
BSS138W  
SOT323  
(PbFree)  
T , T  
°C  
°C  
Operating and Storage Junction  
Temperature Range  
55 to +150  
J
STG  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
T
L
Maximum Lead Temperature for  
Soldering Purposes, 1/16” from  
Case for 10 Seconds  
300  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
June, 2022 Rev 2  
BSS138W/D  

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