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BSS138 PDF预览

BSS138

更新时间: 2024-11-26 17:01:27
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
3页 257K
描述
0.2A, 50V, 0.3W, N Channel, Small Signal MOSFETs

BSS138 数据手册

 浏览型号BSS138的Datasheet PDF文件第2页浏览型号BSS138的Datasheet PDF文件第3页 
Product Specification  
N-Channel Logic Level Enhancement Mode Field Effect Transistor  
BSS138  
FEATURES  
Low on-resisrance  
Low gate threshold voltage  
Low input capacitance  
Fast switching speed  
Low input/output leakage  
SOT-23  
ORDERING INFORMATION  
Type No.  
BSS138  
Marking  
K38  
Package Code  
SOT-23  
MAXIMUM RATING @ Ta=25unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
VDSS  
Drain-Source voltage  
50  
V
VDGR  
VGSS  
ID  
Drain-Gate voltage RGS20KΩ  
50  
V
V
Gate-Surce Voltage  
±20  
200  
300  
417  
Drain current  
-continuous  
mA  
mW  
/W  
PD  
Power Dissipation  
Rθ  
Thermal Resistance,Junction-to-Ambient  
JA  
TJ, TSTG  
Junction and Storage Temperature  
-55 to +150  
MTM0041A  
www.gmesemi.com  
1

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