Datasheet > BSS138AKM-Q

BSS138AKM-Q

更新时间： 2024-05-23 22:22:22

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
15页	286K
描述
60 V, N-channel Trench MOSFETProduction

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BSS138AKM-Q 数据手册

BSS138AKM-Q

60 V, N-channel Trench MOSFET

2 April 2024

Product data sheet

1. General description

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3

(SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

2. Features and benefits

•

Logic-level compatible

•

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection

AEC-Q101 qualified

3. Applications

•

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

gate-source voltage

drain current

T_j= 25 °C

V_GS

-20

I_D

V_GS= 10 V; T_amb= 25 °C

[1]

350

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 100 mA; T_j= 25 °C

2.2

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm².

12 3 4 5 6 7...15

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