Datasheet > BSS138_11

BSS138_11

更新时间： 2024-02-04 00:53:19

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
3页	156K
描述
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

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中文翻译

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数据手册

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BSS138_11 数据手册

UNISONIC TECHNOLOGIES CO., LTD

BSS138

Preliminary

Power MOSFET

N-CHANNEL LOGIC LEVEL

ENHANCEMENT MODE

DESCRIPTION

This device employs advanced MOSFET technology and

features low gate charge while maintaining low on-resistance.

Optimized for switching applications, this device improves the

overall efficiency of DC/DC converters and allows operation to higher

switching frequencies.

FEATURES

* R_DS(ON)=0.7Ω @ V_GS=10V

* R_DS(ON)=1Ω @ V_GS=4.5V

* Low Capacitance

* Low Gate Charge

* Fast Switching Capability

* Avalanche Energy Specified

SYMBOL

3.Drain

2.Gate

1.Source

ORDERING INFORMATION

Ordering Number

Pin Assignment

Package

Packing

Lead Free

Halogen Free

BSS138L-AE2-R

BSS138L-AL3-R

BSS138G-AE2-R

BSS138G-AL3-R

SOT-23-3

SOT-323

Tape Reel

Note: Pin Assignment: G: Gate D: Drain S: Source

MARKING

www.unisonic.com.tw

1 of 3

QW-R502-271.e

12 3

中文翻译

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