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BSS138_08

更新时间： 2024-11-25 09:00:35
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美台 - DIODES 晶体晶体管
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4页 134K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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BSS138_08 数据手册

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BSS138  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Please click here to visit our online spice models database.  
Features  
Mechanical Data  
•
•
•
•
•
•
Low On-Resistance  
•
•
Case: SOT-23  
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
Lead, Halogen and Antimony Free, RoHS Compliant  
"Green" Device (Notes 3 and 4)  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
•
•
•
•
Terminal Connections: See Diagram  
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.008 grams (approximate)  
Drain  
•
Qualified to AEC-Q101 Standards for High Reliability  
SOT-23  
D
Gate  
S
G
TOP VIEW  
Source  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
Value  
50  
50  
Units  
V
V
Drain-Gate Voltage RGS ≤ 20KΩ  
Gate-Source Voltage  
Continuous  
Continuous  
V
±20  
200  
Drain Current  
mA  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Power Dissipation (Note 1)  
Symbol  
Pd  
Rθ  
Value  
300  
Units  
mW  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
417  
°C/W  
°C  
JA  
-55 to +150  
Tj, TSTG  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 2)  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
Symbol Min  
Typ Max Unit  
Test Condition  
VGS = 0V, ID = 250μA  
VDS = 50V, VGS = 0V  
VGS = ±20V, VDS = 0V  
50  
⎯
⎯
75  
⎯
⎯
V
µA  
nA  
BVDSS  
IDSS  
IGSS  
⎯
0.5  
±100  
ON CHARACTERISTICS (Note 2)  
Gate Threshold Voltage  
Static Drain-Source On-Resistance  
Forward Transconductance  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
0.5  
⎯
100  
1.2  
1.4  
⎯
1.5  
3.5  
⎯
V
Ω
mS  
VGS(th)  
RDS (ON)  
gFS  
VDS = VGS, ID = 250μA  
VGS = 10V, ID = 0.22A  
VDS = 25V, ID = 0.2A, f = 1.0KHz  
50  
25  
8.0  
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
⎯
⎯
⎯
Output Capacitance  
pF VDS = 10V, VGS = 0V, f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
20  
20  
ns  
ns  
tD(ON)  
tD(OFF)  
⎯
⎯
⎯
⎯
VDD = 30V, ID = 0.2A, RGEN = 50Ω  
Turn-Off Delay Time  
Notes:  
1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. Short duration pulse test used to minimize self-heating effect.  
3. No purposefully added lead. Halogen and Antimony Free.  
4. Product manufactured with Data Code V9 (week 33, 2008) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code V9 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
May 2008  
© Diodes Incorporated  
BSS138  
Document number: DS30144 Rev. 13 - 2  
1234

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