Datasheet > BSS138_15

BSS138_15

更新时间： 2024-01-03 19:54:21

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
7页	839K
描述
50V N-Channel MOSFET

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中文翻译

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数据手册

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BSS138_15 数据手册

BSS138

50V N-Channel MOSFET

GENERAL FEATURES

● V_DS= 50V,I_D= 0.22A

R_DS(ON)< 6Ω @ V_GS=4.5V

R_DS(ON)< 3.5Ω @ V_GS=10V

ESD Rating：1000V HBM

● High Power and current handing capability

● Lead free product

Schematic Diagram

● Surface Mount Package

APPLICATIONS

●Direct Logic-Level Interface: TTL/CMOS

●Drivers: Relays, Solenoids, Lamps, Hammers,

Display, Memories, Transistors, etc.

●Battery Operated Systems

Marking and Pin Assignment

●Solid-State Relays

SOT-23 Top View

PACKAGE MARKING AND ORDERING INFORMATION

Device Marking

Device

Device Package

Reel Size

Tape Width

Quantity

S138

BSS138

SOT-23

Ø180mm

8 mm

3000 units

ABSOLUTE MAXIMUM RATINGS (T_A=25℃unless otherwise noted)

Parameter

Symbol

V^DS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

±20

V^GS

0.22

I_D

Drain Current-Continuous@ Current-Pulsed (Note 1)

I_D(70℃)

I_DM

0.18

0.88

Maximum Power Dissipation

0.43

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 175

T_J,T_STG

THERMAL CHARACTERISTICS

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

350

℃/W

ELECTRICAL CHARACTERISTICS (T_A=25℃unless otherwise noted)

Parameter Symbol Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

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Rev.2.2

12 3 4 5 6 7

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