Datasheet > BSS138_1

BSS138_1

更新时间： 2024-02-29 01:29:04

品牌	Logo	应用领域
美台 - DIODES		晶体晶体管
页数	文件大小	规格书
5页	478K
描述
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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BSS138_1 数据手册

SPICE MODEL: BSS138

BSS138

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features

Low On-Resistance

Low Gate Threshold Voltage

SOT-23

Low Input Capacitance

Fast Switching Speed

Dim

Min

0.37

1.20

2.30

0.89

0.45

1.78

2.80

0.013

0.903

0.45

0.085

0°

Max

0.51

1.40

2.50

1.03

0.60

2.05

3.00

0.10

1.10

0.61

0.180

8°

Low Input/Output Leakage

TOP VIEW

Lead Free/RoHS Compliant (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

Case: SOT-23

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020C

Drain

Terminals: Solderable per MIL-STD-202, Method 208

Lead Free Plating (Matte Tin Finish annealed over Alloy 42

leadframe).

Terminal Connections: See Diagram

Marking (See Page 2): K38

Gate

Ordering & Date Code Information: See Page 2

Weight: 0.008 grams (approximate)

Source

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Symbol

Maximum Ratings

Characteristic

BSS138

Units

V_DSS

V_DGR

V_GSS

I_D

Drain-Source Voltage

Drain-Gate Voltage R_GS£ 20KW

Gate-Source Voltage

Drain Current

Continuous

±20

°C/W

°C

200

P_d

Power Dissipation (Note 1)

300

Thermal Resistance, Junction to Ambient (Note 1)

Operating and Storage Temperature Range

417

qJA

T_j, T_STG

-55 to +150

@ T_A= 25°C unless otherwise specified

Electrical Characteristics

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 2)

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate-Body Leakage

BV_DSS

I_DSS

V_GS= 0V, I_D= 250mA

V_DS= 50V, V_GS= 0V

µA

0.5

I_GSS

V_GS= ±20V, V_DS= 0V

±100

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

V_GS(th)

R_{DS (ON)}

g_FS

V_DS= V_GS, I_D= 250mA

0.5

1.2

1.4

1.5

3.5

V_GS= 10V, I_D= 0.22A

Static Drain-Source On-Resistance

Forward Transconductance

DYNAMIC CHARACTERISTICS

Input Capacitance

V_DS= 25V, I_D= 0.2A, f = 1.0KHz

100

C_iss

C_oss

C_rss

V_DS= 10V, V_GS= 0V

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

8.0

t_D(ON)

V_DD= 30V, I_D= 0.2A,

R_GEN= 50W

t_D(OFF)

Turn-Off Delay Time

Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001,

which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. Short duration test pulse used to minimize self-heating effect.

3. No purposefully added lead.

DS30144 Rev. 11 - 2

1 of 5

BSS138

www.diodes.com

ã Diodes Incorporated

12 3 4 5

中文翻译

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与BSS138_1相关器件

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BSS138_11	UTC	获取价格	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
BSS138_14	PANJIT	获取价格	50V N-Channel Enhancement Mode MOSFET - ESD Protected
BSS138_15	GOOD-ARK	获取价格	50V N-Channel MOSFET
BSS138_15	UTC	获取价格	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
BSS138_17	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
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BSS138-13-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
BSS138-7	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS138-7-F	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
BSS138A	MCC	获取价格	Tape: 3K/Reel, 120K/Ctn.;

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